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NUS6189MN
ELECTRICAL CHARACTERISTICS (T J = 25 ° C, CNTRL ≤ 1.5 V, V CC = 6.0 V, unless otherwise specified)
Characteristic
Input Capacitance (V EB = -0.5 V, f = 1.0 MHz, Note 5)
Output Capacitance (V CB = -3.0 V, f = 1.0 MHz, Note 5)
Symbol
C ibo
C obo
Min
–
–
Typ
240
50
Max
400
100
Unit
pF
pF
CHARGING FET (MOSFET1) (T J = 25 ° C, unless otherwise specified)
Voltage Drop Across FET
V GS = -4.5 V, I Load = 1.0 A
V GS = -2.5 V, I Load = 1.0 A
V GS = -4.5 V, I Load = 1.0 A, T J = 150 ° C (Note 5)
V DS
–
–
–
32
44
62
40
50
70
mV
On Resistance
R DS(on)
mV
V GS = -4.5 V, I Load = 1.0 A
V GS = -2.5 V, I Load = 1.0 A
V GS = -4.5 V, I Load = 1.0 A, T J = 150 ° C, (Note 5)
–
?
?
32
44
62
40
50
70
Off State Leakage Current (Note 5)
T J = 125 ° C
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge (Note 5)
Threshold Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Gate Resistance
Forward Transconductance (V DS = -6 V, I D = 1.0 A)
Gate Threshold Voltage (V GS = V DS , I D = -250 m A)
Negative Threshold Temperature Coefficient
I Leak
C ISS
C OSS
C RSS
Q G(TOT)
Q G(TH)
Q GS
Q GD
R G
g fs
V GS(th)
V GS(th) /T J
–
–
–
–
–
–
–
–
–
–
–
? 0.45
–
? 0.1
–
1330
200
115
13
1.5
2.2
2.9
14.4
0.9
? 0.67
2.7
? 1.0
? 10
–
–
–
15.7
–
–
–
–
–
? 1.1
–
m A
pF
pF
pF
nC
nC
nC
nC
W
S
V
mV/
° C
5. Guaranteed by design.
6. Pulsed Condition: Pulse Width = 300 us, Duty Cycle < 2%.
http://onsemi.com
6
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